Resistive random-access memories using quasi-2D halide perovskites for wafer-scale reliable switching behaviors
Titel:
Resistive random-access memories using quasi-2D halide perovskites for wafer-scale reliable switching behaviors
Auteur:
Kim, Hyojung Choi, Min-ju Suh, Jun Min Shim, Young-Seok Im, In Hyuk Hyun, Daijoon Yang, Seok Joo Cai, Zhicheng Hilal, Muhammad Lee, Mi Gyoung Moon, Cheon Woo Kim, Soo Young Jang, Ho Won