Ex-situ n-type doped carrier-injection layers in direct bandgap GeSn LEDs
Titel:
Ex-situ n-type doped carrier-injection layers in direct bandgap GeSn LEDs
Auteur:
Casiez, L. Cardoux, C. Acosta Alba, P. Bernier, N. Richy, J. Pauc, N. Calvo, V. Coudurier, N. Rodriguez, P. Concepción, O. Buca, D. Frauenrath, M. Hartmann, J.M. Chelnokov, A. Reboud, V.