Aluminum channeling in 4H-SiC by high-energy implantation above 10 MeV
Titel:
Aluminum channeling in 4H-SiC by high-energy implantation above 10 MeV
Auteur:
Belanche, Manuel Yonezawa, Yoshiyuki Heller, René Müller, Arnold Vockenhuber, Christof Martinella, Corinna Rüb, Michael Kato, Masashi Murata, Koichi Tsuchida, Hidekazu Nakayama, Koji Grossner, Ulrike