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Determination of effective Ga/N ratio to control GaN growth behavior in liquid-target reactive magnetron sputter epitaxy |
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Titel: |
Determination of effective Ga/N ratio to control GaN growth behavior in liquid-target reactive magnetron sputter epitaxy |
Auteur: |
Lo, Yi-Ling Prabaswara, Aditya Chang, Jui-Che Bairagi, Samiran Zhirkov, Igor Sandström, Per Rosen, Johanna Järrendahl, Kenneth Hultman, Lars Birch, Jens Hsiao, Ching-Lien |
Verschenen in: |
Materials science in semiconductor processing |
Paginering: |
Jaargang 176 () nr. C pagina's p. |
Jaar: |
2024 |
Inhoud: |
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Uitgever: |
The Authors |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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