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High performance resistive random access memory based on Ag/TiO2 Nanorods/FTO for image recognition applications |
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Titel: |
High performance resistive random access memory based on Ag/TiO2 Nanorods/FTO for image recognition applications |
Auteur: |
Yang, Kanyu Shi, Chaojie Tian, Ruizhao Deng, Haoyue He, Jie Qi, Yangyang Yang, Zhengchun Zhao, Jinshi Fan, Zhen Liu, Jun |
Verschenen in: |
Materials science in semiconductor processing |
Paginering: |
Jaargang 171 () nr. C pagina's p. |
Jaar: |
2024 |
Inhoud: |
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Uitgever: |
Elsevier Ltd |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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