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                                       Details for article 48 of 49 found articles
 
 
  VO2 layers with high resistive switching ratio by atomic layer deposition
 
 
Title: VO2 layers with high resistive switching ratio by atomic layer deposition
Author: Baji, Zsófia
Pósa, László
Molnár, György
Szabó, Zoltán
Volom, Mátyás
Surca, Angelja Kjara
Drazic, Goran
Volk, János
Appeared in: Materials science in semiconductor processing
Paging: Volume 162 () nr. C pages p.
Year: 2023
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 48 of 49 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands