Corrigendum to “Effects of oxygen vacancies on ferroelectric characteristics of RF-sputtered Hf0.5Zr0.5O2” [Mater. Sci. Semicond. Process. 160 (2023) 107401]
Titel:
Corrigendum to “Effects of oxygen vacancies on ferroelectric characteristics of RF-sputtered Hf0.5Zr0.5O2” [Mater. Sci. Semicond. Process. 160 (2023) 107401]
Auteur:
Han, Changhyeon Kwon, Ki Ryun Kim, Jeonghan Yim, Jiyong Kim, Sangwoo Park, Eun Chan You, Ji Won Jeong, Soi Choi, Rino Kwon, Daewoong