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Journal description
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Details for article 51 of 114 found articles
| Title: |
Modeling of Ga1−x In x As1−y−zNySbz/GaAs quantum well properties for near-infrared lasers |
| Author: |
Aissat, A. Nacer, S. Ykhlef, F. Vilcot, J.P. |
| Appeared in: |
Materials science in semiconductor processing |
| Paging: | Volume 16 (2013) nr. 6 pages 7 p. |
| Year: |
2013 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 51 of 114 found articles
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