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Journal description
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Details for article 30 of 51 found articles
| Title: |
Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes |
| Author: |
Korucu, D. Turut, A. Turan, R. Altindal, Ş. |
| Appeared in: |
Materials science in semiconductor processing |
| Paging: | Volume 16 (2013) nr. 2 pages 8 p. |
| Year: |
2013 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 30 of 51 found articles
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