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Journal description
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Details for article 19 of 61 found articles
| Title: |
Enhancement-mode thin film transistor using amorphous phosphorus-doped Indium–Zinc–Tin-Oxide channel layer |
| Author: |
Yang, Hui Yang, Weiguang Su, Jinbao Zhang, Xiqing |
| Appeared in: |
Materials science in semiconductor processing |
| Paging: | Volume 137 () nr. C pages p. |
| Year: |
2022 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 19 of 61 found articles
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