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                                       Details for article 16 of 35 found articles
 
 
  Growth and properties of the GaN cap layer strongly influenced by the composition of the underlying AlGaN
 
 
Title: Growth and properties of the GaN cap layer strongly influenced by the composition of the underlying AlGaN
Author: Moszak, K.
Pucicki, D.
Grodzicki, M.
Olszewski, W.
Majchrzak, D.
SerafiƄczuk, J.
Gorantla, S.
Hommel, D.
Appeared in: Materials science in semiconductor processing
Paging: Volume 136 () nr. C pages p.
Year: 2021
Contents:
Publisher: The Authors
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 16 of 35 found articles
 
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