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                                       Details for article 27 of 60 found articles
 
 
  Multilayer SiNx passivated Al2O3 gate dielectric featuring a robust interface for ultralong-lifetime AlGaN/GaN HEMT
 
 
Title: Multilayer SiNx passivated Al2O3 gate dielectric featuring a robust interface for ultralong-lifetime AlGaN/GaN HEMT
Author: Wang, Cong
Wei, Yu-Chen
Tan, Xiao
Ali, Luqman
Jing, Chang-Qiang
Appeared in: Materials science in semiconductor processing
Paging: Volume 135 () nr. C pages p.
Year: 2021
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 27 of 60 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands