Digital Library
Close Browse articles from a journal
 
<< previous    next >>
     Journal description
       All volumes of the corresponding journal
         All issues of the corresponding volume
           All articles of the corresponding issues
                                       Details for article 24 of 60 found articles
 
 
  Molecular beam epitaxy growth and characterization of AlGaN epilayers in nitrogen-rich condition on Si substrate
 
 
Title: Molecular beam epitaxy growth and characterization of AlGaN epilayers in nitrogen-rich condition on Si substrate
Author: Zhang, Qihua
Yin, Xue
Martel, Eli
Zhao, Songrui
Appeared in: Materials science in semiconductor processing
Paging: Volume 135 () nr. C pages p.
Year: 2021
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 24 of 60 found articles
 
<< previous    next >>
 
 Koninklijke Bibliotheek - National Library of the Netherlands