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Journal description
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Details for article 10 of 60 found articles
| Title: |
GaN/InGaN double quantum well (DQW) gate structure for GaN-on-Si based normally-off AlGaN/GaN high electron mobility transistors (HEMTs) |
| Author: |
Biswas, Debaleen Tsuboi, Takuya Egawa, Takashi |
| Appeared in: |
Materials science in semiconductor processing |
| Paging: | Volume 135 () nr. C pages p. |
| Year: |
2021 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 10 of 60 found articles
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