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Reduction of threading dislocations in GaN grown on patterned sapphire substrate masked with serpentine channel |
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Titel: |
Reduction of threading dislocations in GaN grown on patterned sapphire substrate masked with serpentine channel |
Auteur: |
Khan, Muhammad Saddique Akbar Liao, Hui Yu, Guo Iqbal, Imran Lei, Menglai Lang, Rui Mi, Zehan Chen, Huanqing Zong, Hua Hu, Xiaodong |
Verschenen in: |
Materials science in semiconductor processing |
Paginering: |
Jaargang 134 () nr. C pagina's p. |
Jaar: |
2021 |
Inhoud: |
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Uitgever: |
Elsevier Ltd |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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