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Journal description
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Details for article 1 of 20 found articles
| Title: |
Ab initio study of the effect of hydrogen passivation on boron-oxygen-carbon related defect complexes in silicon |
| Author: |
Abdurrazaq, A. Raji, Abdulrafiu T. Meyer, Walter E. |
| Appeared in: |
Materials science in semiconductor processing |
| Paging: | Volume 110 () nr. C pages p. |
| Year: |
2020 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 1 of 20 found articles
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