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                                       Details for article 25 of 42 found articles
 
 
  InGaN-based light-emitting diodes with Al content graded p-AlxGa1-xN top contact layer
 
 
Title: InGaN-based light-emitting diodes with Al content graded p-AlxGa1-xN top contact layer
Author: Lee, Ming- Lun
Tu, Shang-Ju
Sheu, Jinn-Kong
Appeared in: Physica. E, Low-dimensional systems and nanostructures
Paging: Volume 143 () nr. C pages p.
Year: 2022
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 25 of 42 found articles
 
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