Band gap engineering of vacancy-ordered halide perovskite Cs2SnCl6 from substitutional doping of Pt (Cs2Sn(1-x)PtxCl6 where x = 0, 0.25, 0.50, 0.75 and 1.00) and its effects on thermoelectric properties using the first-principles approach
Titel:
Band gap engineering of vacancy-ordered halide perovskite Cs2SnCl6 from substitutional doping of Pt (Cs2Sn(1-x)PtxCl6 where x = 0, 0.25, 0.50, 0.75 and 1.00) and its effects on thermoelectric properties using the first-principles approach
Auteur:
Ahmed, Fahim Zuhair Abbas Shah, Syed Ul Hassan, Najam Niaz, Shanawer Tirth, Vineet Hussien, Mohamed Parveen, Amna