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                                       Details for article 10 of 32 found articles
 
 
  Ge incorporation inside 4H-SiC during homoepitaxial growth by chemical vapor deposition
 
 
Title: Ge incorporation inside 4H-SiC during homoepitaxial growth by chemical vapor deposition
Author: Alassaad, Kassem
Soulière, Véronique
Cauwet, François
Peyre, Hervé
Carole, Davy
Kwasnicki, Pawel
Juillaguet, Sandrine
Kups, Thomas
Pezoldt, Jörg
Ferro, Gabriel
Appeared in: Acta Materialia
Paging: Volume 75 (2014) nr. C pages 8 p.
Year: 2014
Contents:
Publisher: Acta Materialia Inc.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 10 of 32 found articles
 
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