|
Ge incorporation inside 4H-SiC during homoepitaxial growth by chemical vapor deposition |
|
|
|
Title: |
Ge incorporation inside 4H-SiC during homoepitaxial growth by chemical vapor deposition |
Author: |
Alassaad, Kassem Soulière, Véronique Cauwet, François Peyre, Hervé Carole, Davy Kwasnicki, Pawel Juillaguet, Sandrine Kups, Thomas Pezoldt, Jörg Ferro, Gabriel |
Appeared in: |
Acta Materialia |
Paging: |
Volume 75 (2014) nr. C pages 8 p. |
Year: |
2014 |
Contents: |
|
Publisher: |
Acta Materialia Inc. |
Source file: |
Elektronische Wetenschappelijke Tijdschriften |
|
|
|
|