Local structure modification around Si atoms in Si-implanted monocrystalline β-Ga2O3 (100) under heated substrate conditions
Titel:
Local structure modification around Si atoms in Si-implanted monocrystalline β-Ga2O3 (100) under heated substrate conditions
Auteur:
Demchenko, I.N. Syryanyy, Y. Shokri, A. Melikhov, Y. Domagała, J. Minikayev, R. Derkachova, A. Munnik, F. Kentsch, U. Zając, M. Reck, A. Haufe, N. Galazka, Z.