Locating Si atoms in Si-doped boron carbide: A route to understand amorphization mitigation mechanism
Titel:
Locating Si atoms in Si-doped boron carbide: A route to understand amorphization mitigation mechanism
Auteur:
Khan, Atta U. Etzold, Anthony M. Yang, Xiaokun Domnich, Vladislav Xie, Kelvin Y. Hwang, Chawon Behler, Kristopher D. Chen, Mingwei An, Qi LaSalvia, Jerry C. Hemker, Kevin J. Goddard III, William A. Haber, Richard A.