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Arsenic-ion implantation-induced defects in HgCdTe films studied with Hall-effect measurements and mobility spectrum analysis |
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Titel: |
Arsenic-ion implantation-induced defects in HgCdTe films studied with Hall-effect measurements and mobility spectrum analysis |
Auteur: |
Izhnin, I.I. Mynbaev, K.D. Voitsekhovsky, A.V. Korotaev, A.G. Syvorotka, I.I. Fitsych, O.I. Varavin, V.S. Dvoretsky, S.A. Mikhailov, N.N. Remesnik, V.G. Yakushev, M.V. Swiatek, Z. Morgiel, J. Bonchyk, O.Yu. Savytskyy, H.V. |
Verschenen in: |
Infrared physics and technology |
Paginering: |
Jaargang 98 (2019) nr. C pagina's 230-235 |
Jaar: |
2019 |
Inhoud: |
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Uitgever: |
Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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