Influence of shallow versus deep etching on dark current and quantum efficiency in InAs/GaSb superlattice photodetectors and focal plane arrays for long wavelength infrared detection
Titel:
Influence of shallow versus deep etching on dark current and quantum efficiency in InAs/GaSb superlattice photodetectors and focal plane arrays for long wavelength infrared detection
Auteur:
Höglund, L. Rodriguez, J.B. Marcks von Würtemberg, R. Naureen, S. Ivanov, R. Asplund, C. Alchaar, R. Christol, P. Rouvié, A. Brocal, J. Saint-Pé, O. Costard, E.