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Details for article 4 of 63 found articles
| Title: |
A nonlinear resistive switching behaviors of Ni/HfO2/TiN memory structures for self-rectifying resistive switching memory |
| Author: |
Yun, Min Ju Lee, Doowon Kim, Sungho Wenger, Christian Kim, Hee-Dong |
| Appeared in: |
Materials characterization |
| Paging: | Volume 182 () nr. C pages p. |
| Year: |
2021 |
| Contents: | |
| Publisher: |
Elsevier Inc. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 4 of 63 found articles
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