Interface percolation and random trap generation in ferroelectric memory: A two-step degradation mechanism explored through low-frequency noise spectroscopy
Titel:
Interface percolation and random trap generation in ferroelectric memory: A two-step degradation mechanism explored through low-frequency noise spectroscopy
Auteur:
Koo, Ryun-Han Shin, Wonjun Im, Jiseong Kim, Seungwhan Ryu, Sangwoo Jung, Gyuweon Kim, Jangsaeng Park, Sung-Ho Choi, Kangwook Ko, Jonghyun Lee, Sung-Tae Kwon, Daewoong Lee, Jong-Ho