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Resistive state relaxation time in ZrO2(Y)-based memristive devices under the influence of external noise |
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Titel: |
Resistive state relaxation time in ZrO2(Y)-based memristive devices under the influence of external noise |
Auteur: |
Koryazhkina, M.N. Filatov, D.O. Shishmakova, V.A. Shenina, M.E. Belov, A.I. Antonov, I.N. Kotomina, V.E. Mikhaylov, A.N. Gorshkov, O.N. Agudov, N.V. Guarcello, C. Carollo, A. Spagnolo, B. |
Verschenen in: |
Chaos, solitons & fractals |
Paginering: |
Jaargang 162 () nr. C pagina's p. |
Jaar: |
2022 |
Inhoud: |
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Uitgever: |
Elsevier Ltd |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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