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  Comparative electron diffraction analysis of strain relaxation in AlxGa1-xN materials in the microelectronics industry: 4D-STEM approach vs. TEM-based N-PED solution
 
 
Title: Comparative electron diffraction analysis of strain relaxation in AlxGa1-xN materials in the microelectronics industry: 4D-STEM approach vs. TEM-based N-PED solution
Author: Drouillas, Estève
Mattei, Jean-Gabriel
Warot-Fonrose, Bénédicte
Appeared in: Micron
Paging: Volume 190 () nr. C pages p.
Year: 2025
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 2 of 18 found articles
 
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