Electron beam-induced crystallization of Al2O3 gate layer on β-Ga2O3 MOS capacitors
Titel:
Electron beam-induced crystallization of Al2O3 gate layer on β-Ga2O3 MOS capacitors
Auteur:
Klingshirn, Christopher J. Jayawardena, Asanka Dhar, Sarit Ramamurthy, Rahul P. Morisette, Dallas Warecki, Zoey Cumings, John Zheleva, Tsvetanka Lelis, Aivars Salamanca-Riba, Lourdes G.