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Journal description
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Details for article 7 of 38 found articles
| Title: |
Capacitance–voltage behaviour of Schottky diodes fabricated on p-type silicon for radiation-hard detectors |
| Author: |
Moloi, S.J. McPherson, M. |
| Appeared in: |
Radiation physics and chemistry |
| Paging: | Volume 85 (2013) nr. C pages 10 p. |
| Year: |
2013 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 7 of 38 found articles
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