Dual H2O2 production paths over chemically etched MoS2/FeS2 heterojunction: Maximizing self-sufficient heterogeneous Fenton reaction rate under the neutral condition
Titel:
Dual H2O2 production paths over chemically etched MoS2/FeS2 heterojunction: Maximizing self-sufficient heterogeneous Fenton reaction rate under the neutral condition
Auteur:
Yang, Yang Yu, Haochen Wu, Maoquan Zhao, Tingting Guan, Yina Yang, Dong Zhu, Yufeng Zhang, Yanqiu Ma, Shouchun Wu, Jie Liu, Li Yao, Tongjie