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                                       Details for article 14 of 37 found articles
 
 
  Influence of extended defects and oval shaped facet on the minority carrier lifetime distribution in as-grown 4H-SiC epilayers
 
 
Title: Influence of extended defects and oval shaped facet on the minority carrier lifetime distribution in as-grown 4H-SiC epilayers
Author: Cui, Yingxin
Li, Juntao
Zhou, Kun
Zhang, Xinhe
Sun, Guosheng
Appeared in: Diamond and related materials
Paging: Volume 92 (2019) nr. C pages 25-31
Year: 2019
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 14 of 37 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands