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                                       Details for article 22 of 80 found articles
 
 
  Growth and doping via gas-source molecular beam epitaxy of SiC and SiC AlN heterostructures and their microstructural and electrical characterization
 
 
Title: Growth and doping via gas-source molecular beam epitaxy of SiC and SiC AlN heterostructures and their microstructural and electrical characterization
Author: Kern, R.S.
Järrendahl, K.
Tanaka, S.
Davis, R.F.
Appeared in: Diamond and related materials
Paging: Volume 6 (1997) nr. 10 pages 7 p.
Year: 1997
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 22 of 80 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands