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                                       Details for article 2 of 68 found articles
 
 
  Annealing of diamond above 800 °C: need for and results of Si3N4 encapsulation
 
 
Title: Annealing of diamond above 800 °C: need for and results of Si3N4 encapsulation
Author: Fontaine, F.
Deneuville, A.
Lucazeau, E.
Gheeraert, E.
Savall, C.
Bruyère, J.C.
Appeared in: Diamond and related materials
Paging: Volume 4 (1995) nr. 5-6 pages 4 p.
Year: 1995
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 2 of 68 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands