Homoepitaxial single crystal diamond grown on natural diamond seeds (type IIa) with boron-implanted layer demonstrating the highest mobility of 1150cm2/Vs at 300K for ion-implanted diamond
Titel:
Homoepitaxial single crystal diamond grown on natural diamond seeds (type IIa) with boron-implanted layer demonstrating the highest mobility of 1150cm2/Vs at 300K for ion-implanted diamond