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                                       Details for article 30 of 114 found articles
 
 
  Electrical properties of a B doped layer in diamond formed by hot B implantation and high-temperature annealing
 
 
Title: Electrical properties of a B doped layer in diamond formed by hot B implantation and high-temperature annealing
Author: Tsubouchi, Nobuteru
Ogura, M.
Mizuochi, N.
Watanabe, H.
Appeared in: Diamond and related materials
Paging: Volume 18 (2009) nr. 2-3 pages 4 p.
Year: 2009
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 30 of 114 found articles
 
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