Improved Schottky contacts to annealed 4H-SiC using a protective carbon cap: Investigated using current voltage measurements and atomic force microscopy
Titel:
Improved Schottky contacts to annealed 4H-SiC using a protective carbon cap: Investigated using current voltage measurements and atomic force microscopy
Auteur:
Guy, O.J. Doneddu, D. Chen, L. Jennings, M.R. Ackland, M.P. Baylis, R. Holton, M.D. Dunstan, P. Wilks, S.P. Mawby, P.A.