The synergistic effect of vertical structural parameters of vertical-type two-dimensional hole gas diamond MOSFETs on improving the overall performance of devices based on TCAD simulation
Titel:
The synergistic effect of vertical structural parameters of vertical-type two-dimensional hole gas diamond MOSFETs on improving the overall performance of devices based on TCAD simulation
Auteur:
Hou, Zhenfei Yan, Wenqiang Liu, Yiwei Niu, Gang Tang, Wenhua Sun, Yanxiao Li, Jie Zhao, Jinyan Zhao, Yuan Wu, Shengli