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                                       Details for article 146 of 189 found articles
 
 
  Silicon dioxide and silicon nitride as a passivation and edge termination for 4H-SiC Schottky diodes
 
 
Title: Silicon dioxide and silicon nitride as a passivation and edge termination for 4H-SiC Schottky diodes
Author: Sochacki, Mariusz
Lukasiewicz, Radoslaw
Rzodkiewicz, Witold
Werbowy, Aleksander
Szmidt, Jan
Staryga, Elzbieta
Appeared in: Diamond and related materials
Paging: Volume 14 (2005) nr. 3-7 pages 4 p.
Year: 2005
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 146 of 189 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands