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                                       Details for article 22 of 64 found articles
 
 
  Fabrication of a submicron source-drain gap for p–i–p field effect transistors using epitaxial diamond layers
 
 
Title: Fabrication of a submicron source-drain gap for p–i–p field effect transistors using epitaxial diamond layers
Author: Kawakami, N.
Yokota, Y.
Tachibana, T.
Hayashi, K.
Inoue, K.
Kobashi, K.
Appeared in: Diamond and related materials
Paging: Volume 13 (2004) nr. 11-12 pages 5 p.
Year: 2004
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 22 of 64 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands