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                                       Details for article 24 of 45 found articles
 
 
  Molecular dynamics simulation of silicon vacancy defects in silicon carbide by hydrogen ion implantation and subsequent annealing
 
 
Title: Molecular dynamics simulation of silicon vacancy defects in silicon carbide by hydrogen ion implantation and subsequent annealing
Author: Fan, Yexin
Xu, Zongwei
Song, Ying
Sun, Tianze
Appeared in: Diamond and related materials
Paging: Volume 119 () nr. C pages p.
Year: 2021
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 24 of 45 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands