The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells
Titel:
The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells
Auteur:
Liu, S.T. Yang, J. Zhao, D.G. Jiang, D.S. Liang, F. Chen, P. Zhu, J.J. Liu, Z.S. Liu, W. Xing, Y. Peng, L.Y. Zhang, L.Q. Wang, W.J. Li, M. Zhang, Y.T. Du, G.T.