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                                       Details for article 6 of 32 found articles
 
 
  In situ Eu doping into Al x Ga1 − x N grown by organometallic vapor phase epitaxy to improve luminescence properties
 
 
Title: In situ Eu doping into Al x Ga1 − x N grown by organometallic vapor phase epitaxy to improve luminescence properties
Author: Koizumi, Atsushi
Kawabata, Kosuke
Lee, Dong-gun
Nishikawa, Atsushi
Terai, Yoshikazu
Ofuchi, Hironori
Honma, Tetsuo
Fujiwara, Yasufumi
Appeared in: Optical materials
Paging: Volume 41 (2015) nr. C pages 5 p.
Year: 2015
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 6 of 32 found articles
 
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