Influence of high-k La2O3 interfacial oxide layer on the performance of GaN based Schottky barrier ultraviolet-B and A photodetection sensors
Titel:
Influence of high-k La2O3 interfacial oxide layer on the performance of GaN based Schottky barrier ultraviolet-B and A photodetection sensors
Auteur:
Nanda Kumar Reddy, Nallabala Reddy, K Vamsidhar Kaleemulla, S. Sharma, Shivani Manjunath, V. Kumar, Suresh Krishana, G. Gopi Rosaiah, P. Ravi, N. Kummara, Venkata Krishnaiah Kushvaha, Sunil Singh Minnam Reddy, Vasudeva Reddy Usmani, Yusuf Siraj