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S2-semipolar GaN grown by HVPE on a non-polar m-plane sapphire: Features of growth and structural, morphological, and optical properties |
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Titel: |
S2-semipolar GaN grown by HVPE on a non-polar m-plane sapphire: Features of growth and structural, morphological, and optical properties |
Auteur: |
Seredin, P.V. Buylov, N.S. Goloshchapov, D.L. Ivkov, S.A. Matyukhina, E.P. Arsentyev, I.N. Nashchekin, A.V. Sharofidinov, Sh.Sh. Mizerov, A.M. Pirogov, E.V. Sobolev, M.S. |
Verschenen in: |
Optical materials |
Paginering: |
Jaargang 129 () nr. C pagina's p. |
Jaar: |
2022 |
Inhoud: |
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Uitgever: |
Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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