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                                       Details for article 47 of 67 found articles
 
 
  PL characterization of GaN nanolayer obtained by N ion implantation into Si3N4/GaAs
 
 
Title: PL characterization of GaN nanolayer obtained by N ion implantation into Si3N4/GaAs
Author: Coelho-JĂșnior, H.
Maltez, R.L.
Appeared in: Optical materials
Paging: Volume 101 () nr. C pages p.
Year: 2020
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 47 of 67 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands