Central-cell corrections for hydrogenic, silicon (Si), selenium (Se), sulfur (S), and germanium (Ge) donor impurities and pressure–temperature effects on the optical properties of the GaAs/GaAlAs multi-layer quantum disk
Titel:
Central-cell corrections for hydrogenic, silicon (Si), selenium (Se), sulfur (S), and germanium (Ge) donor impurities and pressure–temperature effects on the optical properties of the GaAs/GaAlAs multi-layer quantum disk
Auteur:
Fakkahi, A. Başer, P. Jaouane, M. Sali, A. Ed-Dahmouny, A. El-Bakkari, K. Arraoui, R. Azmi, H.