Tailoring optoelectronic properties of InGaN-based quantum wells through electric field, indium content, and confinement shape: A theoretical investigation
Titel:
Tailoring optoelectronic properties of InGaN-based quantum wells through electric field, indium content, and confinement shape: A theoretical investigation
Auteur:
En-nadir, Redouane El-ghazi, Haddou Leontie, Liviu Tihtih, Mohammed Zaki, Shrouk E. Belaid, Walid Carlescu, Aurelian Zorkani, Izeddine