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Journal description
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Details for article 1057 of 18303 found articles
| Title: |
Aspects of defects in silica related to dielectric breakdown of gate oxides in MOSFETs |
| Author: |
Blöchl, Peter E Stathis, James H |
| Appeared in: |
Physica. B, Condensed matter |
| Paging: | Volume 273-274 (1999) nr. C pages 5 p. |
| Year: |
1999 |
| Contents: | |
| Publisher: |
Elsevier Science B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 1057 of 18303 found articles
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