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                                       Details for article 971 of 6539 found articles
 
 
  Defect and interface analyses of non-stoichiometric n-type GaSb thin films grown on Ge(100) substrates by rapid thermal annealing
 
 
Title: Defect and interface analyses of non-stoichiometric n-type GaSb thin films grown on Ge(100) substrates by rapid thermal annealing
Author: Nishimoto, Naoki
Fujihara, Junko
Yoshino, Katsumi
Appeared in: Physica. B, Condensed matter
Paging: Volume 537 (2018) nr. C pages 349-354
Year: 2018
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 971 of 6539 found articles
 
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