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                                       Details for article 2507 of 6662 found articles
 
 
  Incorporation of oxygen or di-hydrogen in silicon monovacancy: spin-resonance study of defect excited state
 
 
Title: Incorporation of oxygen or di-hydrogen in silicon monovacancy: spin-resonance study of defect excited state
Author: Mchedlidze, T.
Fukata, N.
Suezawa, M.
Appeared in: Physica. B, Condensed matter
Paging: Volume 308-310 (2001) nr. C pages 4 p.
Year: 2001
Contents:
Publisher: Elsevier Science B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 2507 of 6662 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands